![]() ![]() The forward biased E-B junction is forward biased so the majority charge carriers i.e. Operation: The operation of the NPN transistor as follows:ġ. So the depletion layer width at E-B junction is reduced and depletion layer width at the C-B junction is increased. The base-emitter junction is forward biased by the dc source V EB and the collector-base junction is reverse biased by the V CB. A Transistor never operated in this mode. Reverse active mode: In this region, junction E-B junction is reverse biased and the C-B junction is forward biased. In this region, the transistor acts as an open switch.Ĥ. The current in transistor is zero because no charge carriers are emitted by emitter into the base regions and no charge carriers are collected by collector region. ![]() Cut-off region: In this region both the junction is reverse biased. Collector current is not dependent on the base current so transistor behaves like a closed switch.ģ. Saturation region: In this region, the emitter-base region is forward biased and collector-base junction is forward biased. Collector current is dependent on the base current.Ģ. A transistor in the active region is used for amplification. Active region: In this region, the emitter-base region is forward biased and collector-base junction is reverse biased. The following table shows the different regions of operations on different biasing configurations. On the basis of the biasing transistor operates in the three different regions. When we apply external voltage supply to the transistor this process is known as the biasing of the transistor. 1.2 Transistors symbols Transistor Action
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